ultra-fast avalanche sinterglass diode byv28-50, BYV28-100, byv28-150, byv28-200 vishay semiconductors www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86044 72 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 25-aug-10 mechanical data case: sod-64 terminals: plated axial leads, solderable per mil-std-750, method 2026 polarity: color band denotes cathode end mounting position: any weight: approx. 858 mg features ? controlled avalanche characteristic ? low forward voltage ? ultra fast recovery time ? glass passivated junction ? hermetically sealed package ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? halogen-free according to iec 61249-2-21 definition applications ? very fast rectification e.g. for switch mode power supply 949588 parts table part type differentiation package byv28-50 v r = 50 v; i fav = 3.5 a sod-64 BYV28-100 v r = 100 v; i fav = 3.5 a sod-64 byv28-150 v r = 150 v; i fav = 3.5 a sod-64 byv28-200 v r = 200 v; i fav = 3.5 a sod-64 absolute maximum ratings (t amb = 25 c, unless otherwise specified) parameter test condition part symbol value unit peak reverse voltage, non repetitive see electrical characteristics byv28-50 v rsm 55 v BYV28-100 v rsm 110 v byv28-150 v rsm 165 v byv28-200 v rsm 220 v reverse voltage = repetitive peak reverse voltage see electrical characteristics byv28-50 v r = v rrm 50 v BYV28-100 v r = v rrm 100 v byv28-150 v r = v rrm 150 v byv28-200 v r = v rrm 200 v peak forward surge current t p = 10 ms, half sine wave i fsm 90 a repetitive peak forward current i frm 25 a average forward current i fav 3.5 a pulse energy in avalanche mode, non repetitive (inductive load switch off) i (br)r = 1 a, tj = 175 c e r 20 mj junction and storage temperature range t j = t stg - 55 to + 175 c
byv28-50, BYV28-100, byv28-150, byv28-200 ultra-fast avalanche sinterglass diode vishay semiconductors document number: 86044 for technical ques tions within your region, please cont act one of the following: www.vishay.com rev. 1.7, 25-aug-10 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com 73 typical characteristics (t amb = 25 c, unless otherwise specified) fig. 1 - max. thermal re sistance vs. lead length fig. 2 - forward current vs. forward voltage fig. 3 - max. average forward current vs. ambient temperature fig. 4 - reverse current vs. junction temperature maximum thermal resistance (t amb = 25 c, unless otherwise specified) parameter test condition symbol value unit junction ambient lead length l = 10 mm, t l = constant r thja 25 k/w on pc board with spacing 25 mm r thja 70 k/w electrical characteristics (t amb = 25 c, unless otherwise specified) parameter test condition part symbol min. typ. max. unit forward voltage i f = 5 a v f --1.1v i f = 5 a, t j = 175 c v f - - 0.89 v reverse current v r = v rrm i r --1a v rsm i r - - 100 a v r = v rrm , t j = 165 c i r - - 150 a reverse recovery time i f = 0.5 a, i r = 1 a, i r = 0.25 a t rr - - 30 ns 0 10 20 30 40 15 10 5 0 202530 r thja - ther. re s i s t. junction/ambient (k/w) l - lead length (mm) 949548 ll t l = con s tant i f - forward current (a) 0.001 0.01 0.1 1 10 100 0.0 0.4 0.8 1.2 1.6 2.0 v f - forward voltage (v) 16453 t j = 175 c t j = 25 c 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0 20 40 60 80 100 120 140 160 180 t amb - ambient temperature (c) 16454 i fav - average forward current (a) v r = v rrm half s ine wave r thja 25 k/w l = 10 mm r thja 70 k/w pcb: d = 25 mm 1 10 100 1000 25 50 75 100 125 150 175 t j - junction temperature (c) 16455 v r = v rrm i r - rever s e current (a)
byv28-50, BYV28-100, byv28-150, byv28-200 vishay semiconductors ultra-fast avalanche sinterglass diode www.vishay.com for technical qu estions within your region, please contact one of the fo llowing: document number: 86044 74 diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com rev. 1.7, 25-aug-10 fig. 5 - max. reverse power dissipation vs. junction te mperature fig. 6 - diode capacitance vs. reverse voltage package dimensions in millimeters (inches): sod-64 0 10 20 30 40 50 60 25 50 75 100 125 150 175 16456 v r = v rrm p r - rever s e power di ss ipation (mw) p r - limit at 100 % v r t j - junction temperature (c) p r - limit at 80 % v r 0 50 100 150 200 250 0.1 1 10 100 v r - rever s e voltage (v) 16457 c d - diode capacitance (pf) f = 1 mhz cathode identification 4.3 (0.168) max. 1.35 (0.053) max. 4 (0.156) max. sintered glass case sod-64 26(1.014) min. 26 (1.014) min. document-no.: 6.563-5006.4-4 rev. 3 - date: 09.february.2005 94 9587
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